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ZXMN2A14F
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS
STATIC
I =250 A, V DS = V GS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
(1)
Resistance
Forward Transconductance (1) (3)
V (BR)DSS
I DSS
I GSS
V GS(th)
R DS(on)
g fs
20
0.7
9.4
1
100
0.060
0.110
V
A
nA
V
S
I D =250 A, V GS =0V
V DS =20V, V GS =0V
V GS = 12V, V DS =0V
D
V GS =4.5V, I D =3.4A
V GS =2.5V, I D =2.5A
V DS =10V,I D =3.4A
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
544
132
85
pF
pF
pF
V DS = 10V, V GS =0V,
f=1MHz
SWITCHING (2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
4.0
5.3
16.6
9.5
6.6
1.2
2.1
ns
ns
ns
ns
nC
nC
nC
V DD = 10V, V GS = 4.5V
I D = 1A
R G ? 6.0
V DS =10V,V GS = 4.5V,
I D =3.4A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V SD
0.85
0.95
V
T J =25°C, I S =(3.3)A,
V GS =0V
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
t rr
Q rr
11.4
4.6
ns
nC
T J =25°C, I F =(1.7)A,
di/dt= 100A/ s
NOTES
(1) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 3 - SEPTEMBER 2007
SEMICONDUCTORS
4
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